# An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

## TL;DR

This paper introduces a more efficient and reliable method for calibrating the growth of complex oxide films using molecular beam epitaxy, enhancing precision and stability in fabricating quantum heterostructures.

## Contribution

The authors develop a novel calibration technique that improves stability and efficiency in growing complex oxide films via molecular beam epitaxy.

## Key findings

- Enhanced stability of growth calibration process
- Reduced time for calibration procedures
- Improved atomic-scale precision in oxide film growth

## Abstract

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.