# Switchable valley functionalities of an $n-n^{-}-n$ junction in 2D semiconductors

## TL;DR

This paper demonstrates that an $n-n^{-}-n$ junction in 2D semiconductors can switch between valley filter and valley source functions via gate control, enabling flexible valleytronic device functionalities.

## Contribution

It introduces a gate-controlled switchable valley filter and source in 2D semiconductor junctions, supported by tight-binding calculations for TMDs and graphene.

## Key findings

- Valley filter and source functions are enabled by intra- and inter-valley scatterings.
- The valley filter effect has an angular dependent polarity and vanishes upon angular integration.
- Chiral junction directions can concentrate valley polarization for efficient valleytronic applications.

## Abstract

We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the junction, the valley filter and valley source functions are enabled respectively by intra- and inter-valley scatterings, and the two functions dominate respectively at small and large band-offset between the $n$ and $n^{-}$ regions. It can be generally shown that, the valley filter effect has an angular dependent polarity and vanishes under angular integration, by the same constraint from time-reversal symmetry that leads to its absence in one-dimension. These findings are demonstrated for monolayer transition metal dichalcogenides and graphene using tight-binding calculations. We further show that junction along chiral directions can concentrate the valley pump in an angular interval largely separated from the bias direction, allowing efficient havest of valley polarization in a cross-bar device.