# Current-induced spin orientation in semiconductors and low-dimensional   structures

**Authors:** N.S. Averkiev, I.A. Kokurin

arXiv: 1706.04415 · 2017-06-15

## TL;DR

This paper reviews how electric currents can induce spin polarization in semiconductors and low-dimensional structures, discussing underlying mechanisms, related phenomena, and recent experimental findings.

## Contribution

It provides a comprehensive overview of current-induced spin effects, including new experimental results and analysis of band structure and spin relaxation influences.

## Key findings

- Identification of key mechanisms for spin polarization
- Discussion of spin Hall and inverse spin Hall effects
- Presentation of recent experimental results

## Abstract

We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.

## Full text

_Full body text omitted from this summary view._ Fetch the complete paper as Markdown: https://tomesphere.com/paper/1706.04415/full.md

## Figures

3 figures with captions in the complete paper: https://tomesphere.com/paper/1706.04415/full.md

## References

35 references — full list in the complete paper: https://tomesphere.com/paper/1706.04415/full.md

---
Source: https://tomesphere.com/paper/1706.04415