# MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect

## TL;DR

This study compares the magnetotransport and Hall effect in bulk, thin film, and nanostructured MnSi, revealing intrinsic and extrinsic contributions and exploring the potential for topological Hall effects in nanostructures.

## Contribution

It provides a detailed analysis of transport properties in MnSi nanostructures, distinguishing intrinsic and extrinsic effects, and discusses the detection of topological Hall effects in skyrmionic phases.

## Key findings

- Identification of extrinsic and intrinsic contributions to transport
- Separation of effects through data modeling
- Discussion on topological Hall effect detection

## Abstract

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic phase.