Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

TL;DR

This study demonstrates dynamic modulation of optical emission from GaN/InGaN nanowire quantum dots using surface acoustic waves, enabling control over emission energy and biexciton binding energy at high frequency.

Contribution

It introduces a method to dynamically control quantum dot emission properties via surface acoustic waves, a novel approach for nitride-based single photon emitters.

Findings

Emission energy modulated over 1.5 meV at ~330 MHz

Biexciton binding energy linearly changes with SAW amplitude

Potential for high-frequency control of quantum emitters

Abstract

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.