# Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single   photon emitters

**Authors:** Snezana Lazic, Ekaterina Chernysheva, Zarko Gacevic, Noemi, Garcia-Lepetit, Herko P. van der Meulen, Marcus Muller, Frank Bertram, Peter, Veit, J\"urgen Christen, Almudena Torres-Pardo, Jos\'e M. Gonz\'alez Calbet,, Enrique Calleja, Jose M. Calleja

arXiv: 1706.03599 · 2017-06-13

## TL;DR

This paper demonstrates the fabrication and characterization of ordered arrays of InGaN/GaN nanostructures that act as reliable, polarized single-photon emitters operable at high temperatures, advancing solid-state quantum light sources.

## Contribution

It introduces a new method to create spatially ordered InGaN/GaN nanostructure arrays as efficient, polarized single-photon emitters with potential for high-temperature operation.

## Key findings

- Single-photon emission confirmed by photon antibunching measurements.
- Emission covers blue-to-green spectral range with high polarization ratio.
- Photon emission rate scales linearly with excitation power.

## Abstract

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.

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Source: https://tomesphere.com/paper/1706.03599