Distinct Effects of Cr Bulk Doping and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3

TL;DR

This study compares how bulk doping and surface deposition of Cr on Bi2Se3 films differently influence their electronic structure and chemical environment, revealing distinct effects based on the doping method.

Contribution

It demonstrates that Cr doping in the bulk versus surface deposition leads to significantly different modifications in the electronic and chemical properties of Bi2Se3.

Findings

Bulk Cr doping alters the electronic structure distinctly from surface deposition.

Surface Cr deposition affects the chemical environment differently than bulk doping.

The effects are crucial for tailoring topological insulator properties.

Abstract

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.