# Effect of oxygen plasma on nanomechanical silicon nitride resonators

## TL;DR

This study investigates how oxygen plasma treatments affect the tensile stress and damping in silicon nitride nanomechanical resonators, revealing oxide layer formation and its impact on device performance.

## Contribution

It provides new insights into the effects of oxygen plasma on silicon nitride resonators, including oxide layer formation and its influence on stress and damping.

## Key findings

- Oxygen plasma creates nanometer-thick silicon dioxide layers with high compressive stress.
- Oxide layers can reduce tensile stress by nearly 50%.
- Intrinsic damping increases linearly with oxide layer thickness.

## Abstract

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter we study the in uence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma of only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16)GPa. Such oxide layers can cause a reduction of the e ective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide lm thickness. An oxide layer of 1.5nm grown in just 10s in a 50W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be e ciently removed in bu ered HF.