Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

TL;DR

This paper reports the successful fabrication of high-quality N-polar GaN p-n diodes using plasma-assisted molecular beam epitaxy, demonstrating excellent electrical and optical properties suitable for advanced electronic and photonic applications.

Contribution

It introduces a novel method for growing N-polar GaN p-n diodes with superior electrical and optical performance on single-crystal wafers.

Findings

High rectification ratio and electroluminescence observed

Strong near-band edge emission with suppressed deep level luminescence

High reverse breakdown electric field due to low dislocation density

Abstract

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off current ratio and interband photon emission. The measured electroluminescence spectrum is dominated by strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.