# Dry transfer of CVD graphene using MoS$_2$-based stamps

## TL;DR

This paper demonstrates a dry transfer method for CVD graphene using MoS₂-based stamps, enabling scalable fabrication of heterostructures with high mobility and tunable electronic properties.

## Contribution

It introduces MoS₂ as an alternative stamp material for dry transfer of CVD graphene, expanding fabrication options for van-der-Waals heterostructures.

## Key findings

- Achieved high charge carrier mobility up to 12,000 cm²/(Vs).
- Observed strong charge density dependence of mobility.
- Demonstrated control of carrier density via top gating.

## Abstract

Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS$_2$) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van-der-Waals heterostructures using CVD graphene combined with different two-dimensional materials and, on the other hand, can be a route towards a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm$^2$/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS$_2$ by applying a top gate voltage.