# Edge transport in InAs and InAs/GaSb quantum wells

## TL;DR

This study explores edge conduction in InAs and InAs/GaSb quantum wells at low temperatures, revealing similar edge resistivities and anisotropic conduction properties, advancing understanding of topological edge states.

## Contribution

It provides experimental evidence of edge conduction in InAs quantum wells and compares it with InAs/GaSb systems, highlighting anisotropic conduction and length dependence of edge resistance.

## Key findings

- Edge resistivity of 1-2 kΩ/μm in InAs quantum wells
- Similar edge resistivities in InAs/GaSb double quantum wells
- Anisotropic conduction with larger in-plane extent

## Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{k\Omega/\mu m}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.