Leakage-free electrolytes with different conductivity for non-volatile memory device utilizing insulator/metal ferromagnet transition of SrCoOx
Takayoshi Katase, Yuki Suzuki, and Hiromichi Ohta

TL;DR
This study demonstrates that increasing the conductivity of leakage-free electrolytes significantly enhances the electrochemical switching speed in SrCoOx-based non-volatile memory devices, enabling more efficient magnetic phase transitions.
Contribution
It introduces a method to control electrolyte conductivity to improve switching speed in SrCoOx memory devices, highlighting ion migration as the rate-limiting step.
Findings
Higher electrolyte conductivity shortens switching time by two orders of magnitude.
Leakage-free electrolytes with controlled conductivity enable efficient electrochemical phase switching.
Ion migration rate is crucial for device performance improvement.
Abstract
The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO 7Al2O3 film with nanoporous structure (CAN), but the electrochemical oxidation/reduction of SrCoOx layer required the application of high gate voltage (Vg) up to 20 V for a very long retention-time (t) 40 minutes, primarily due to the low s (2.0 x 10-8 S cm-1 at RT) of leakage-free water.We then controlled the s of leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with nanopillar array structure, from 8.0 x 10-8 S cm-1 to 2.5 x 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of SrCoOx layer under small Vg = -3 V, becomes two…
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Taxonomy
TopicsTransition Metal Oxide Nanomaterials · Perovskite Materials and Applications · Advanced Memory and Neural Computing
