Generating nanoscale and atomically-sharp p-n junctions in graphene via monolayer-vacancy-island engineering of Cu surface
Ke-Ke Bai, Jiao-Jiao Zhou, Yi-Cong Wei, Jia-Bin Qiao, Yi-Wen Liu,, Hai-Wen Liu, Hua Jiang, Lin He

TL;DR
This paper demonstrates a novel method to create nanoscale, atomically-sharp p-n junctions in graphene using monolayer-vacancy-island engineering on Cu surfaces, enabling studies of quantum phenomena in graphene.
Contribution
It introduces a new technique to engineer atomically-sharp p-n junctions in graphene via Cu surface modifications, facilitating quantum confinement and electron optics experiments.
Findings
Nanoscale p-n junctions with 660 meV height achieved
Quantum dots formed by p-n junctions exhibit quasi-bound states
Direct visualization of quantum interference patterns in graphene GQDs
Abstract
Creation of high quality p-n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains conspicuously difficult to generate nanoscale and atomically-sharp p-n junctions in graphene. Here, we employ monolayer-vacancy-island engineering of Cu surface to realize nanoscale p-n junctions with atomically-sharp boundaries in graphene monolayer. The variation of graphene-Cu separations around the edges of the Cu monolayer-vacancy-island affects the positions of the Dirac point in graphene, which consequently lead to atomically-sharp p-n junctions with the height as high as 660 meV in graphene. The generated sharp p-n junctions isolate the graphene above the Cu monolayer-vacancy-island as nanoscale graphene quantum dots (GQDs) in a continuous graphene sheet.…
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