# Whisker growth on Sn thin film accelerated under gamma-ray irradiation

## TL;DR

This study demonstrates that gamma-ray irradiation significantly accelerates the growth of tin whiskers on thin films, suggesting a potential method for rapid testing of whisker formation due to ionizing radiation effects.

## Contribution

The paper introduces gamma-ray irradiation as a novel approach to accelerate tin whisker growth, providing insights into defect-induced electrostatic effects on whisker development.

## Key findings

- Whisker growth was accelerated by a factor of ~50 under gamma-ray exposure.
- Gamma-ray irradiation increased whisker density and length.
- Electrostatic fields from charged defects are linked to whisker growth enhancement.

## Abstract

We report on growth of tin (Sn) metal whiskers that is significantly accelerated under gamma-ray irradiation. The studied Sn thin film, evaporated on glass substrate, was subjected to a total of ~60 hours of irradiation over the course of 30 days. The irradiated sample demonstrated the enhanced development, in both whisker densities and lengths, resulting in an acceleration factor of ~50. This makes gamma-ray irradiation a candidate tool for accelerated testing of whisker propensity. We attribute the observed enhancement to electrostatic fields created by charged defects in the glass substrate under ionizing radiation of gamma-rays.