Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer

TL;DR

This study reports on the growth and characterization of Ce2O2Bi thin films, revealing antiferromagnetic behavior and magnetoresistance effects influenced by the layered structure combining conducting Bi2- net and magnetic Ce-O layers.

Contribution

It demonstrates the successful epitaxial growth of Ce2O2Bi films and explores their magnetic and transport properties, highlighting the interplay between magnetic order and carrier transport in this layered material.

Findings

Ce ions confirmed as 3+ state via XPS

Observed antiferromagnetic transition at 10 K

Large angular-dependent magnetoresistance

Abstract

ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2- square net could be influenced by magnetic ordering in the Ce-O layer owing to its unique layered structure [Bi2-/(Ce2O2)2+], particularly in the form of epitaxial thin films.