Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

TL;DR

This paper investigates how various factors, including recombination rates, influence carrier distribution in InGaN/GaN MQW LEDs, revealing that recombination plays a crucial role beyond hole mobility and effective mass.

Contribution

It introduces the significance of recombination rates in carrier distribution, expanding beyond traditional focus on hole mobility and effective mass.

Findings

Recombination rate significantly affects carrier distribution.

Carrier distribution is not solely determined by hole mobility.

Photoluminescence and electroluminescence spectra reveal key factors.

Abstract

Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence and temperature-dependent electroluminescence spectra. Employing a dichromatic LED device, we demonstrate that the carrier recombination rate should be considered playing an important role in determining the carrier distribution in the MQW active region, not just the simple hole characteristics such as low mobility and large effective mass.