Comparative Analysis of Current Component in InGaN-based Blue and AlGaInP-based Red Light-emitting Diode

TL;DR

This study compares the electrical and optical characteristics of InGaN-based blue and AlGaInP-based red LEDs, revealing differences in current components and suggesting improvements for efficiency and voltage performance.

Contribution

It provides a detailed analysis of current components in both LED types using advanced modeling, highlighting their similarities and differences for the first time.

Findings

InGaN LEDs exhibit higher electron overflow and efficiency droop.

The physical origin of potential drops differs between the two LED types.

Increasing radiative recombination can improve InGaN LED performance.

Abstract

In this paper, we aim to understand the apparent characteristics of IQE and I-V curve in AlGaInP and InGaN LED devices. For the analysis, we separate the current into radiative current and non-radiative current component by using the information of IQE. We carefully analyze each current component by ideality factor, S parameter, and the modified Shockley diode equation which is suitable for LED device. Through the analyses, it has been found that the characteristics of respective current components are basically similar for both samples while the physical origin of the potential drop induced by radiative current and the amount of double injection current induced non-radiative current by are different. Compared with AlGaInP LEDs, the InGaN LEDs have higher degrees of electron overflow initiated by low recombination rate in active region, causing both the efficiency droop and the higher operating voltage. To remedy this, the radiative recombination rate and/or the active volume should be increased further.