# Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene

## TL;DR

This paper demonstrates how combining strain-induced gauge fields and magnetic fields in graphene can produce simultaneous valley-polarized transport and quantum valley Hall effects, revealing new control over valley-dependent electronic properties.

## Contribution

It introduces a novel method to generate and control valley-polarized currents in graphene using superimposed gauge fields and magnetic fields, with robust theoretical and computational analysis.

## Key findings

- Observation of a $e^2/h$ Hall conductivity plateau indicating valley polarization.
- Demonstration of coexistence of dissipative and quantum valley Hall effects.
- Results are robust against disorder effects.

## Abstract

We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a resonance/anti-resonance effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a $e^2/h$ Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.