Post trimming of silicon photonics microresonators by nanoscale flash memory technology
Meir Grajower, Noa Mazurski, Joseph Shappir, Uriel Levy

TL;DR
This paper introduces a CMOS-compatible post-fabrication trimming method for silicon photonic microresonators using nanoscale flash memory technology, enabling precise resonance frequency adjustments after manufacturing.
Contribution
It demonstrates a novel integration of flash memory technology with silicon photonics for electrical post-trimming of resonators, addressing fabrication imperfections.
Findings
Effective resonance frequency tuning achieved via charge trapping in SONOS structure.
The method is CMOS-compatible and suitable for scalable manufacturing.
Potential applications include filters, modulators, sensors, and lasers.
Abstract
Flash memory technology is widely common in modern microelectronics, and is essentially affecting our daily life. Considering the recent progress in photonic circuitry, and in particular silicon photonics circuitry, there is now an opportunity to embed the flash memory technology in photonic applications. A particularly promising candidate that can benefit from such integration is the photonic resonator. As of today, chip scale resonators are essential building blocks in modern silicon photonic platform. However, their properties, and in particular their resonance frequencies deviate from their designed values due to unavoidable fabrication imperfections, imposing a stringent limitation on the applicability of such devices. Here we present a solution for this major obstacle and demonstrate electrical approach for post trimming of such resonators. This is achieved by integrating the…
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Taxonomy
TopicsPhotonic and Optical Devices · Photonic Crystals and Applications · Neural Networks and Reservoir Computing
