# Epitaxial electrical contact to graphene on SiC

## TL;DR

This paper introduces a scalable, resist-free method for creating electrical contacts to graphene on SiC by growing few-layer graphene directly on metallic carbide, enabling low-resistance contacts and potential for large-scale device fabrication.

## Contribution

The authors demonstrate a novel, scalable growth process for graphene on metallic carbide that simplifies contact fabrication and improves electrical performance.

## Key findings

- Low contact resistance achieved
- Observation of Josephson effect in devices
- Scalable, resist-free fabrication method

## Abstract

Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.