# Analysis of Carrier Accumulation in Active Region by Energy Loss Mechanisms in InGaN Light-Emitting Diodes

## TL;DR

This paper investigates carrier transport and recombination in InGaN/GaN LEDs, revealing that carrier accumulation and spill-over significantly influence efficiency droop and forward voltage as injection current varies.

## Contribution

It introduces a new perspective by separately analyzing carrier energy loss to explain carrier accumulation and spill-over effects in InGaN LEDs.

## Key findings

- Carrier accumulation leads to efficiency droop.
- Carrier spill-over affects forward voltage.
- Energy loss analysis clarifies carrier dynamics.

## Abstract

Carrier recombination and transport processes play key roles in determining the optoelectronic performances such as the efficiency droop and forward voltage in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs). In this work, we investigate the dominant carrier transport and recombination processes inside and outside the MQW region as a function of injection current from a new point of view by separately examining the carrier energy loss. Analysis of the measurement results reveals that the carrier accumulation and subsequent spill-over from the MQW active region to the clad is the most probable mechanism of explaining the efficiency and forward voltage variation with the injection current.

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Source: https://tomesphere.com/paper/1705.08251