Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

TL;DR

This study investigates the interaction between magnetic moments and free carriers in d0 ferromagnetic SiC, revealing how this interaction influences magnetic and transport properties relevant for spintronic applications.

Contribution

It provides new insights into the magnetic and transport behavior of d0 ferromagnetic SiC, highlighting the role of p states of carbon and the effects of different implantation methods.

Findings

Magnetic moments originate from carbon p states.

Anomalous Hall effect indicates interaction between spin order and carriers.

Weak ferromagnetism observed in N-implanted SiC compared to Al-implanted SiC.

Abstract

Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.