# Growth and electronic structure of graphene on semiconducting Ge(110)

## TL;DR

This study demonstrates the direct growth of graphene on n-doped Ge(110) substrates, revealing weak interaction that preserves graphene's electronic structure, which is promising for future semiconductor applications.

## Contribution

It introduces a method for growing graphene directly on semiconducting Ge(110) and analyzes the interface's structural and electronic properties.

## Key findings

- Graphene interacts weakly with Ge(110), maintaining its electronic structure.
- Dopants in Ge influence the electronic properties of the graphene interface.
- The growth method reduces contamination issues compared to metal-based synthesis.

## Abstract

The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.