Plasmon modes in graphene-GaAs heterostructures
Nguyen Van Men (1,2), Nguyen Quoc Khanh (2) ((1) University of An, Giang, 18-Ung Van Khiem Street, Long Xuyen, An Giang, Vietnam, (2) University, of Science - VNUHCM, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh, City, VietNam)
TL;DR
This paper studies the behavior of plasmon modes in a heterostructure composed of bilayer graphene and GaAs quantum well, analyzing how various parameters influence their dispersion and damping at zero temperature.
Contribution
It provides a detailed analysis of plasmon dispersion and damping in graphene-GaAs heterostructures considering dielectric nonhomogeneity and interlayer correlations.
Findings
Plasmon frequencies are sensitive to interlayer correlation parameters.
Damping rates depend on electron densities and dielectric constants.
The dielectric environment significantly influences plasmon behavior.
Abstract
We investigate the plasmon dispersion relation and damping rate of collective excitations in a double-layer system consisting of bilayer graphene and GaAs quantum well, separated by a distance, at zero temperature with no interlayer tunneling. We use the random-phase-approximation dielectric function and take into account the nonhomogeneity of the dielectric background of the system. We show that the plasmon frequencies and damping rates depend considerably on interlayer correlation parameters, electron densities and dielectric constants of the contacting media.
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