Boron-doped diamond

TL;DR

This paper presents a thermodynamical model-based method to calculate the bulk modulus of boron-doped diamond, accurately predicting experimental values near the insulator-metal transition point.

Contribution

It introduces a simple thermodynamical calculation approach for bulk modulus in boron-doped diamond, extending previous models to dopant levels around the critical insulator-metal transition.

Findings

Calculated bulk modulus aligns with experimental data at 2.6 at % doping.

Method effectively predicts properties near the insulator-metal transition.

Model improves understanding of defect-related properties in doped diamonds.

Abstract

Boron-doped diamond undergoes an insulator-metal transition at some critical value (around 2.21 at %) of the dopand concentration. Here, we report a simple method for the calculation of its bulk modulus, based on the thermodynamical model, by Varotsos and Alexopoulos, that has been originally suggested for the interconnection between the defect formation parameters in solids and bulk properties. The results obtained at the doping level of 2.6 at %, which was later improved at the level 0.5 at %, are in agreement with the experimental values.