# Theory of topological excitations and metal-insulator transition in reentrant integer quantum Hall effect

## TL;DR

This paper develops a theoretical framework explaining the insulator-metal transition in reentrant integer quantum Hall effects through topological excitations, supported by analytical and numerical evidence.

## Contribution

It introduces a novel topological theory for charge density textures that explains the sharp insulator-metal transition in RIQHE states.

## Key findings

- Topological textures reduce energy for current-carrying excitations.
- The insulator-metal transition is a thermodynamic unbinding of topological defects.
- Theory matches experimental observations of sharp transitions.

## Abstract

The reentrant integer quantum Hall effects (RIQHE) are due to formation of electronic crystals. We show analytically and numerically that topological textures in the charge density distribution in these crystals in the vicinity of charged defects strongly reduce energy required for current-carrying excitations. The theory quantitatively explains sharp insulator-metal transitions experimentally observed in RIQHE states. The insulator to metal transition in RIQHE emerges as a thermodynamic unbinding transition of topological charged defects.