# Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO$_4$ thin-film transistors

## TL;DR

This study reveals a universal relationship between channel conductivity and the balance of weak localization and antilocalization effects in amorphous InGaZnO4 thin-film transistors, regardless of their electrical differences.

## Contribution

It provides a new theoretical framework explaining the universal dependence of WL and WAL contributions on channel conductivity in a-IGZO TFTs.

## Key findings

- Magnetoconductivity shows gate-voltage-controlled WL and WAL competition.
- The weights of WL and WAL depend universally on channel conductivity.
- Results help interpret quantum interference effects in amorphous oxide semiconductors.

## Abstract

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO$_4$ (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage- controlled competitions between weak localization (WL) and weak antilocalization (WAL), and the respective weights of WL and WAL contributions demonstrate an intriguing universal dependence on the channel conductivity regardless of the difference in the electrical characteristics of the a-IGZO TFTs. Our findings help build a theoretical interpretation of the competing WL and WAL observed in the electron systems in a-IGZO TFTs.