Interface Phonon Modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D Multi Quantum Well Structures

TL;DR

This paper investigates interface phonon modes in specific AlN/GaN and AlGaN/GaN multi quantum well structures, analyzing how dielectric constant variations affect these modes using plasma-assisted molecular beam epitaxy.

Contribution

It provides new insights into the interface phonon modes in these MQW structures and how dielectric properties influence their optical phonon behavior.

Findings

Interface phonon modes characterized in AlN/GaN and AlGaN/GaN MQWs

Dielectric constant variations impact phonon mode frequencies

Enhanced understanding of phonon behavior in MQW structures

Abstract

Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant of barrier layers to the IF optical phonon modes of well layers periodically arranged in the MQWs investigated.