Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

TL;DR

This study explores the magnetic anisotropy and reversal mechanisms in epitaxial chromium telluride thin films, revealing strong perpendicular anisotropy and the roles of nucleation and pinning through experimental and simulation approaches.

Contribution

It provides a quantitative explanation of angular magnetization reversal using a defect model and highlights the significance of second order anisotropy in these films.

Findings

Strong perpendicular magnetic anisotropy observed

Angular variation of switching field explained by defect model

Micromagnetic simulations visualize domain switching

Abstract

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.