Intra-Domain Periodic Defects in Monolayer MoS$_2$
Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim,, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc,, and Sanjay K. Banerjee

TL;DR
This study uses high-resolution STM to reveal periodic intra-domain defects in CVD-grown monolayer MoS2, uncovering structural features hidden from optical microscopy and proposing a growth mechanism for these defects.
Contribution
It provides the first detailed atomic-scale characterization of intra-domain periodic defects in monolayer MoS2 and links these features to the growth process.
Findings
Periodic defects are about 50 nm apart and a few nanometers wide.
Defects are visible only with high-resolution STM, not optical microscopy.
A complex growth mechanism explains the formation of these defects.
Abstract
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.
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