Surface-plasmon opto-magnetic field enhancement for all-optical magnetization switching
Aveek Dutta, Alexander V. Kildishev, Vladimir M. Shalaev, Alexandra, Boltasseva, Ernesto E. Marinero

TL;DR
This paper proposes using plasmonic nanostructures to enhance localized electromagnetic fields, enabling efficient all-optical magnetization switching of on-chip nanomagnets at picosecond speeds, which could improve spintronic memory devices.
Contribution
It introduces a plasmonics-based method for on-chip all-optical magnetization switching of nanomagnets, leveraging localized surface plasmon resonances for higher field intensities.
Findings
Simulations show increased opto-magnetic fields with plasmonic coupling.
Localized surface plasmon resonances enable coupling of light to nanomagnets.
Potential for faster, energy-efficient on-chip magnetic memory switching.
Abstract
The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of the storage layer is switched by spin-transfer-torque or spin-orbit torque interactions. Whereas these novel spin-torque interactions exemplify the potential of electron-spin-based devices and memory, the switching speed is limited to the ns regime by the precessional motion of the magnetization. All-optical magnetization switching, based on the inverse Faraday effect, has been shown to be an attractive method for achieving magnetization switching at ps speeds. Successful magnetization reversal in thin films has been demonstrated by using circularly polarized light. However, a method for all-optical switching of on-chip nanomagnets in high density…
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