Quaternary two-dimensional (2D) transition metal dichalcogenides (TMDs) with tunable bandgap

TL;DR

This paper reports the synthesis of quaternary 2D transition metal dichalcogenide alloys with tunable bandgaps, achieved through chemical vapor deposition and theoretical calculations, expanding the flexibility in electronic property engineering.

Contribution

It introduces a new method for synthesizing quaternary TMD alloys with tunable bandgaps and provides theoretical support for the experimental results.

Findings

Bandgap tunability from 1.73 eV to 1.84 eV.

Successful synthesis of MoxW1-xS2ySe2(1-y) alloys.

Theoretical calculations confirm experimental tunability.

Abstract

Alloying/doping in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys has been tuned by changing the growth temperatures. As a result, we can tune the bandgap which varies from 1.73 eV to 1.84 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.