# Large linear magnetoresistance in a transition-metal stannide $\beta$-RhSn$_4$

## TL;DR

This study reports a large linear magnetoresistance in $eta$-RhSn$_4$, attributed to quantum effects from Dirac-like electronic dispersions, with potential implications for quantum magnetoresistive materials.

## Contribution

It demonstrates a significant linear magnetoresistance in $eta$-RhSn$_4$ and links it to quantum effects, expanding understanding of magnetoresistance mechanisms in transition-metal stannides.

## Key findings

- Magnetoresistance reaches ~600% at 2 K under 9 T
- Inconsistent with classical inhomogeneity models
- Aligned with quantum effects from Dirac-like dispersions

## Abstract

Materials exhibiting large magnetoresistance may not only be of fundamental research interest, but also can lead to wide-ranging applications in magnetic sensors and switches. Here we demonstrate a large linear-in-field magnetoresistance, $\Delta \rho/\rho$ reaching as high as $\sim$600$\%$ at 2 K under a 9 Tesla field, in the tetragonal phase of a transiton-metal stannide $\beta$-RhSn$_4$. Detailed analyses show that its magnetic responses are overall inconsistent with the classical model based on the multiple electron scattering by mobility fluctuations in an inhomogenous conductor, but rather in line with the quantum effects due to the presence of Dirac-like dispersions in the electronic structure. Our results may help guiding the future quest for quantum magnetoresistive materials into the family of stannides, similar to the role played by PtSn$_4$ with topological node arcs.