# Semimetallic single atomic layer silicon allotrope with Dirac fermions

## TL;DR

This paper predicts a new buckled single-layer silicon allotrope with Dirac fermions, exhibiting massless charge carriers and high thermal stability, expanding the family of 2D silicon materials with novel electronic properties.

## Contribution

A novel buckled single atomic layer silicon allotrope with Dirac points was predicted using computational methods, demonstrating potential for advanced electronic applications.

## Key findings

- Presence of Dirac point at Fermi energy
- High thermal stability up to 1000 K
- Unique structure composed of eight-membered rings

## Abstract

Materials with Dirac point are so amazing since the charge carriers are massless and have an effective speed of light. Among the reported two-dimensional silicon allotropes, no one showing such exciting nature was proved experimentally. This fact motivates us to search for other such two-dimensional silicon allotropes. As a result, a new single atomic layer thin silicon allotrope was predicted by employing CALYPSO code in this work. This silicon allotrope is composed of eight- membered rings linked by Si-Si bonds and presents buckling formation. Expectedly, the electronic calculation reveals that there exists Dirac point at Fermi energy level. Furthermore, the ab initio molecular dynamics simulations displays that the original atomic configuration can be remained even at an extremely high temperature of 1000 K. We hope this work can expand the family of single atomic layer thin silicon allotropes with Dirac fermions.