# Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy

## TL;DR

This paper provides experimental evidence of topological Dirac surface states in strained HgTe thin films through quantum Hall transport spectroscopy, revealing relativistic Landau level splittings and advancing understanding of topological insulator surface physics.

## Contribution

It demonstrates the existence of Dirac surface states in strained HgTe thin films and characterizes their Landau level structure using quantum Hall transport spectroscopy.

## Key findings

- Quantum Hall regime observed with vanishing resistance.
- Energy splittings of relativistic Landau levels identified.
- Insights into the quantum Hall effect in topological insulator slabs.

## Abstract

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics.