Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units

TL;DR

This paper presents hybrid memristive devices based on gold nanoparticle networks functionalized with electro-polymerizable thiophene-EDOT units, exhibiting negative differential resistance and non-volatile memory, with potential for reconfigurable logic applications.

Contribution

Introduction of a novel hybrid device combining gold nanoparticles and conjugated polymer monolayers demonstrating NDR and memory functionalities with stable, repeatable switching behavior.

Findings

NDR behavior with peak/valley ratio up to 17

Memory ON/OFF ratio of 10^3 to 10^4

Stable data retention up to 24 hours

Abstract

We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with an ON/OFF current ratio of about 1E3 to 1E4. A careful study of the switching dynamics and programming voltage window is conducted demonstrating a non-volatile memory. The data retention of the ON and OFF states is stable (tested up to 24h), well controlled by the voltage and preserved when repeating the switching cycles (800 in this study). We demonstrate reconfigurable Boolean functions in multiterminal connected NP molecule devices.