# Electrostatic Performance of InSb, GaSb, Si and Ge p-channel Nanowires

## TL;DR

This paper compares the electrostatic performance of InSb, GaSb, Si, and Ge p-channel nanowires, highlighting the potential of III-Sb compounds like GaSb and InSb for future semiconductor technologies.

## Contribution

It introduces a self-consistent kp simulator to analyze and compare the electrostatic behavior of different p-type nanowires, emphasizing the role of constituent capacitances.

## Key findings

- GaSb and InSb nanowires show electrostatic performance comparable to Si and Ge.
- Centroid and quantum capacitances vary significantly with the semiconductor material.
- GaSb and InSb are promising for future p-MOS device applications.

## Abstract

The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by traditional semiconductors usually employed for p-MOS such as Si and Ge. To do so, a self-consistent kp simulator has been implemented to achieve an accurate description of the Valence Band and evaluate the charge behavior as a function of the applied gate bias. The contribution and role of the constituent capacitances, namely the insulator, centroid and quantum ones are assessed. It is demonstrated that the centroid and quantum capacitances are strongly dependent on the semiconductor material. We find a good inherent electrostatic performance of GaSb and InSb NWs, comparable to their Ge and Si counterparts making these III-Sb compounds good candidates for future technological nodes.