Electrostatic properties and current transport of two-dimensional Schottky barrier diode

TL;DR

This paper introduces a new theoretical model for 2D Schottky contacts that accurately predicts carrier distribution and potential profiles, revealing significantly higher current densities and lower energy dissipation compared to traditional 3D diodes.

Contribution

A novel model for 2D Schottky heterojunctions based on first-principles calculations, addressing limitations of 3D theories for low-dimensional systems.

Findings

2D Schottky diodes can have current densities 10,000 times higher than 3D counterparts.

The model predicts lower energy dissipation in 2D Schottky diodes.

Carrier distribution and potential profiles are accurately described in 2D heterojunctions.

Abstract

Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation.