Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

TL;DR

This paper presents a physics-based model for radiation-induced static leakage currents in CMOS circuits, accounting for various parameters and validating its applicability to complex FPGA circuits.

Contribution

It introduces a comprehensive compact model for TID-induced leakage in CMOS devices, incorporating dose-rate, annealing, and electric mode effects.

Findings

Model accurately predicts dose-dependent leakage currents.

Applicable to complex FPGA circuits.

Validated against experimental data.

Abstract

Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA circuits.