# Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

## TL;DR

This paper demonstrates a reversible, gate-controlled rectifying behavior in a MoS₂ transistor by inserting a h-BN tunnel layer, enabling improved gate control and potential for advanced nanoelectronic logic devices.

## Contribution

A novel reverted stacking technique with a h-BN tunnel layer suppresses barriers and Fermi level pinning, enabling reversible gate-tunable diode behavior in atomically thin MoS₂ transistors.

## Key findings

- Reversible gate-tunable pn to np diode behavior.
- Suppressed Schottky barriers and Fermi level pinning.
- Homogeneous gate control across the MoS₂ bandgap.

## Abstract

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full acceptance as compliant materials for integration in logic devices. Two key-components to master are the barriers at metal/semiconductor interfaces and the mobility of the semiconducting channel, which endow the building-blocks of ${pn}$ diode and field effect transistor. Here, we have devised a reverted stacking technique to intercalate a wrinkle-free h-BN tunnel layer between MoS$_{2}$ channel and contacting electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed unprecedented features of ambipolar ${pn}$ to ${np}$ diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.