# Sensitivity Limit of Nanoscale Phototransistors

## TL;DR

This paper derives an analytical limit on the sensitivity of nanoscale phototransistors, showing they can detect single photons at room temperature, with implications for low-light sensing.

## Contribution

It introduces the first comprehensive analytical model linking PTD sensitivity to device capacitance and size, highlighting nanoscale potential for single-photon detection.

## Key findings

- Nanoscale PTDs can reach single-photon sensitivity at room temperature.
- Sensitivity is proportional to the square root of the normalized total capacitance.
- Model applies to nanowire-based photodetectors, predicting high sensitivity and speed.

## Abstract

In this paper the optical gain mechanism in phototransistor detectors (PTDs) is explored in low light conditions. An analytical formula is derived for the physical limit on the minimum number of detectable photons for the PTD. This formulation shows that the sensitivity of the PTD, regardless of its material composition, is related to the square root of the normalized total capacitance at the base layer. Since the base total capacitance is directly proportional to the size of the PTD, the formulation shows the scaling effect on the sensitivity of the PTD. We used the extracted formula to study the sensitivity limit of a typical InGaAs/InP heterojunction PTD. Modeling predicts that a PTD with a nanoscale electronic area can reach to a single photon noise equivalent power even at room temperature. The proposed model can also be used to explore the sensitivity and speed of the nanowire-based photodetectors. To the best of our knowledge, this is the first comprehensive study on the sensitivity of the PTD for low light detection.