Adsorption and dynamics of Si atoms at the monolayer Pb/Si(111) surface
Rakesh Kumar, Chuang-Kai Fang, Chih-Hao Lee, Ing-Shouh Hwang

TL;DR
This study investigates the adsorption, diffusion, and aggregation of Si atoms on a Pb/Si(111) surface at low temperatures using STM, revealing detailed atomic behaviors and symmetry-breaking evidence relevant for epitaxial growth.
Contribution
It provides new insights into Si atom dynamics and symmetry-breaking on Pb/Si(111), advancing understanding of initial nucleation and growth mechanisms.
Findings
Si atoms bind to specific on-top sites T1A and T1B
Si atoms switch sites and hop along trimers with temperature
Aggregation into clusters occurs above 170 K
Abstract
In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variable-temperature scanning tunneling microscope (STM). The Pb-covered Si(111) surface form a low-symmetry row-like structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1A and T1B) on the trimer row after deposition at the sample temperature of 125 K. The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1A and T1B sites within the same trimer when the temperature was raised to 150 K. When the temperature was raised above 160 K, the adsorbed Si atoms could hop to other trimers along the same trimer row. Below 170 K, short hops to adjacent trimers dominated, but long hops dominated at temperatures above 170 K.…
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