# High mobility dry-transferred CVD bilayer graphene

## TL;DR

This paper demonstrates the fabrication of high-quality CVD bilayer graphene with high mobility and a tunable band gap, achieved through a novel dry transfer process using hBN, outperforming previous CVD graphene devices.

## Contribution

The study introduces a dry transfer method for CVD bilayer graphene using hBN, resulting in high structural quality, mobility, and tunable electronic properties.

## Key findings

- Charge carrier mobility up to 180,000 cm²/(Vs) at 2 K
- On-off ratio exceeding 10,000
- Band gap opening up to 15 meV

## Abstract

We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices we extract charge carrier mobilities up to 180,000 cm$^2$/(Vs) at 2 K and up to 40,000 cm$^2$/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ration of more than 10,000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.