The conundrum of relaxation volumes in first-principles calculations of charge defects
Anuj Goyal, Kiran Mathew, Richard G. Hennig, Aleksandr Chernatynskiy,, Christopher R. Stank, Samuel T. Murphy, David A. Andersson, Simon R., Phillpot, Blas P. Uberuaga

TL;DR
This paper investigates why charged defect relaxation volumes calculated via DFT are unphysically large, examining correction methods and proposing a volume renormalization approach to better understand charged defect elastic properties.
Contribution
It introduces a volume renormalization method considering electron reservoir changes, improving the physical interpretation of charged defect relaxation volumes in DFT calculations.
Findings
Correction methods have negligible effect on relaxation volumes.
Aggregate formation volumes of neutral reactions are reasonable.
Volume renormalization aligns charged defect volumes with neutral defect expectations.
Abstract
The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the proposed energy corrections to charged defect formation energies on relaxation volumes and find that corrections such as the image charge correction and the alignment correction, which can lead to sizable changes in defect formation energies, have an almost negligible effect on the charged defect relaxation volume. We also investigate the volume for the net neutral defect reactions comprised of individual charged defects, and find that the aggregate formation volumes have reasonable magnitudes.…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · ZnO doping and properties
