# Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing

## TL;DR

This study uses first-principles calculations to explore how small gas molecules interact with monolayer InSe, revealing potential for gas sensing and electronic applications through charge transfer and band gap modifications.

## Contribution

The paper provides a detailed analysis of gas molecule adsorption effects on InSe's electronic properties, highlighting its potential for sensing and optoelectronic devices.

## Key findings

- H2 and H2S are strong donors to InSe.
- NO, NO2, H2O, and NH3 act as effective acceptors.
- Adsorption causes band gap narrowing and Fermi level shifts.

## Abstract

First-principles calculations are performed to investigate the effects of the adsorption of gas molecules (CO, NO, NO2, H2S, N2, H2O, O2, NH3 and H2) on the electronic properties of atomically thin indium selenium (InSe). Our study shows that the lone-pair states of Se are located at the top of the valence band of InSe and close to the Fermi energy level, implying its high sensitivity to external adsorbates. Among these gas molecules, H2 and H2S are strong donors, NO, NO2, H2O and NH3 are effective acceptors, while CO and N2 exhibit negligible charge transfer. The O2 molecule has very limited oxidizing ability and a relatively weak interaction with InSe which is comparable to the N2 adsorption. A clear band gap narrowing is found for the H2S, NO2, and NH3 adsorbed systems whereas a Fermi level shifting to the conduction band is observed upon a moderate uptake of H2 molecules. Our analysis suggests several interesting applications of InSe: 1) Due to the different interaction behaviors with these external molecules, InSe can be used for gas sensing applications; 2) By monitoring the adsorption/desorption behavior of these gas molecules, the population of hole states in InSe due to photon stimulation or defect production can be quantitatively estimated; and 3) It is promising for novel electronic and optoelectronic applications since the adsorption-induced in-gap states and strong charge transfer are able to change the content and polarity of charged carriers and lead to different optical properties.

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Source: https://tomesphere.com/paper/1704.03974