Perfectly Aligned Shallow Ensemble Nitrogen-Vacancy Centers in (111) Diamond
Hitoshi Ishiwata, Makoto Nakajima, Kosuke Tahara, Hayato Ozawa,, Takayuki Iwasaki, Mutsuko Hatano

TL;DR
This paper demonstrates the fabrication of perfectly aligned, high-density shallow nitrogen-vacancy centers in (111) diamond surfaces using step-flow chemical vapor deposition, enabling advanced quantum sensing applications.
Contribution
It introduces a novel CVD growth method for achieving atomic-level control of NV center alignment and depth in diamond, enhancing quantum magnetometry capabilities.
Findings
Achieved >99% alignment of NV centers in (111) diamond surfaces.
Demonstrated high NV density (~10^{19} cm^{-3}) with shallow depths (~9-11 nm).
Confirmed surface-sensitive NMR detection using the fabricated NV ensemble.
Abstract
We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the () surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, which resulted in the formation of a highly concentrated (> cm) nitrogen layer approximately nm away from the substrate surface. Photon counts obtained from the NV centers indicated the presence of x-x cm NV centers, which suggested the formation of an ensemble of NV centers. The optically detected magnetic resonance (ODMR) spectrum confirmed perfect alignment (more than %) for all the samples fabricated by step-flow growth via CVD. Perfectly aligned shallow ensemble NV centers indicated a high Rabi contrast of approximately % which is comparable to the values reported for a…
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