Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone

TL;DR

This study demonstrates the deposition of defected graphene on silicon substrates using thermal decomposition of acetone via chemical vapor deposition, with detailed characterization of the resulting films and interlayers.

Contribution

It introduces a method for depositing defected graphene from acetone and characterizes the resulting films and interlayers using multiple analytical techniques.

Findings

Presence of single- to few-layer defected graphene confirmed by Raman spectroscopy.

Identification of different phase compositions in interlayers, including diamond-like carbon and fullerene-related species.

Large single-layered defected graphene areas observed on amorphous carbon interlayers.

Abstract

We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The deposition takes place on (001) Si substrates at about 1150-11600C. We established by Raman spectroscopy the presence of single- to few- layered defected graphene deposited on two types of interlayers that possess different surface morphology and consisted of mixed sp2 and sp3 hybridized carbon. The study of interlayers by XPS, XRD, GIXRD and SEM identifies different phase composition: i) a diamond-like carbon dominated film consisting some residual SiC, SiO2 etc.; ii) a sp2- dominated film consisting small quantities of C60/C70 fullerenes and residual Si-O-, C=O etc. species. The polarized Raman studies confirm the presence of many single-layered defected graphene areas that are larger than few microns in size on the predominantly amorphous carbon interlayers.