# Spin-orbit interaction in a dual gated InAs/GaSb quantum well

## TL;DR

This study explores how electric fields influence spin-orbit interactions in a dual gated InAs/GaSb quantum well, revealing tunable spin splitting and detailed characterization of Dresselhaus and Rashba effects.

## Contribution

It provides the first detailed measurement of spin-orbit coupling parameters in a dual gated InAs/GaSb quantum well, demonstrating electric field control of spin splitting.

## Key findings

- Linear Dresselhaus strength is 28.5 meVÅ.
- Rashba coefficient varies from 75 to 53 meVÅ with electric field.
- Spin splitting exhibits nonmonotonic behavior in two-carrier regime.

## Abstract

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV$\AA$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.