Multibit memory operation of metal-oxide bi-layer memristors

TL;DR

This paper demonstrates multibit memory operation in metal-oxide bi-layer memristors, achieving a 5.5-bit cell with stable states, low power, and potential for neuromorphic and non-volatile memory applications.

Contribution

It introduces a programming methodology enabling metal-oxide memristors to operate as multibit memory elements with high density and clear state discernibility.

Findings

Achieved a 5.5-bit memory cell with 47 resistive states

Demonstrated excellent retention and low power consumption

Validated benefits of multibit operation for neuromorphic applications

Abstract

In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.