On a universal relation for defects in solids

TL;DR

This paper demonstrates a universal law linking defect parameters such as formation, migration, and dielectric relaxation in solids, showing defect entropies scale with enthalpies across different processes, exemplified by SrF2 doped crystals.

Contribution

It introduces a universal relation for defect parameters in solids, unifying diverse defect processes under a common scaling law.

Findings

Defect entropies scale with defect enthalpies across processes.

Universal law applies to dielectric relaxation and defect formation.

Example provided for SrF2 with various dopants.

Abstract

We show that the defect data parameters related to various defect processes, e.g., formation, migration, dielectric relaxation parameters, obey a universal law. In particular, the defect entropies scale with the defect enthalpies irrespective of the process considered. A concrete example is given here for SrF$_2$ by considering the dielectric relaxation parameters (R$_1$ relaxation mechanism) for crystals doped with trivalent ions of Ce, Eu and Gd, parameters for the anion Frenkel formation as well as for the migration of anion vacancy and the anion interstitial motion.